US 12,408,360 B2
Vertical power devices having mesas and etched trenches therebetween
Daniel Jenner Lichtenwalner, Raleigh, NC (US); and Sei-Hyung Ryu, Cary, NC (US)
Assigned to Wolfspeed, Inc., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on May 13, 2022, as Appl. No. 17/744,604.
Prior Publication US 2023/0369445 A1, Nov. 16, 2023
Int. Cl. H10D 12/01 (2025.01); H10D 12/00 (2025.01); H10D 62/832 (2025.01)
CPC H10D 12/032 (2025.01) [H10D 12/481 (2025.01); H10D 62/8325 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A vertical semiconductor device comprising:
a substrate;
a drift region over the substrate, wherein the substrate and the drift region are doped with a dopant of a first type;
a plurality of channel regions extending from an upper portion of the drift region, wherein there are no regrowth interfaces between the drift region and the plurality of channel regions;
a first material doped with a dopant of a second type and filling trenches between each one of the plurality of channel regions, the second type opposite in polarity to the first type;
at least one first contact over at least one of the plurality of channel regions; and
at least one second contact over a bottom surface of the substrate.