US 12,408,359 B2
Semiconductor element and semiconductor device
Yusuke Matsubara, Kyoto (JP); Osamu Imafuji, Kyoto (JP); Hiroyuki Ando, Kyoto (JP); Hideki Takehara, Kyoto (JP); Takashi Shinohe, Kyoto (JP); and Mitsuru Okigawa, Kyoto (JP)
Assigned to FLOSFIA INC., Kyoto (JP)
Filed by FLOSFIA INC., Kyoto (JP)
Filed on Aug. 5, 2022, as Appl. No. 17/882,148.
Application 17/882,148 is a continuation in part of application No. PCT/JP2021/004412, filed on Feb. 5, 2021.
Claims priority of application No. 2020-019326 (JP), filed on Feb. 7, 2020; application No. 2020-019328 (JP), filed on Feb. 7, 2020; and application No. 2020-019329 (JP), filed on Feb. 7, 2020.
Prior Publication US 2022/0384663 A1, Dec. 1, 2022
Int. Cl. H10D 8/60 (2025.01); H10D 62/80 (2025.01); H10D 30/65 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 62/80 (2025.01); H10D 30/657 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor element comprising:
a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, wherein
the conductive substrate has a larger area than the oxide semiconductor film, and
the conductive substrate has an area that is 1.1 to 4 times an area of the oxide semiconductor film.