US 12,408,357 B2
Capacitance structure
Fu-Chiang Kuo, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 16, 2023, as Appl. No. 18/510,787.
Application 18/510,787 is a division of application No. 17/360,376, filed on Jun. 28, 2021, granted, now 11,855,129.
Claims priority of provisional application 63/166,571, filed on Mar. 26, 2021.
Prior Publication US 2024/0088207 A1, Mar. 14, 2024
Int. Cl. H10D 1/68 (2025.01); H10B 12/00 (2023.01); H10D 1/00 (2025.01)
CPC H10D 1/696 (2025.01) [H10D 1/042 (2025.01); H10D 1/043 (2025.01); H10D 1/716 (2025.01); H10B 12/0387 (2023.02); H10B 12/37 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A capacitance structure comprising:
a metal nitride layer comprising a titanium nitride (TiN) layer;
a dielectric layer disposed on the metal nitride layer, wherein the dielectric layer comprises Al2O3; and
a compositionally graded film disposed between the metal nitride layer and the dielectric layer, the compositionally graded film comprising titanium dioxide (TiO2) and including:
a lower region comprising a mixture of titanium nitride oxide (TiNO) and TiO2 adjacent the TIN layer,
an upper region adjacent the dielectric layer in which an oxygen/nitrogen ratio is oxygen rich, and
an intermediate region comprising TiO2 interposed between the upper region and the lower region.