US 12,408,354 B2
Method to reduce breakdown failure in a MIM capacitor
Hsing-Lien Lin, Hsin-Chu (TW); Chii-Ming Wu, Taipei (TW); Chia-Shiung Tsai, Hsin-Chu (TW); Chung-Yi Yu, Hsin-Chu (TW); and Rei-Lin Chu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Dec. 19, 2022, as Appl. No. 18/067,776.
Application 17/501,269 is a division of application No. 16/579,738, filed on Sep. 23, 2019, granted, now 11,152,455, issued on Oct. 19, 2021.
Application 18/067,776 is a continuation of application No. 17/501,269, filed on Oct. 14, 2021, granted, now 11,594,593.
Prior Publication US 2023/0187478 A1, Jun. 15, 2023
Int. Cl. H01L 23/64 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H10B 61/00 (2023.01); H10D 1/68 (2025.01)
CPC H10D 1/692 (2025.01) [H01L 21/02252 (2013.01); H01L 21/02315 (2013.01); H01L 21/0234 (2013.01); H01L 21/76825 (2013.01); H01L 21/76841 (2013.01); H01L 23/642 (2013.01); H10B 61/10 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A metal-insulator-metal (MIM) capacitor comprising:
a bottom electrode comprising a metal element and a non-metal element, wherein the non-metal element is different than oxygen;
a dielectric layer overlying the bottom electrode;
a top electrode overlying the dielectric layer; and
an interfacial layer between, and directly contacting, the bottom electrode and the dielectric layer, wherein the interfacial layer comprises oxide of the bottom electrode, the metal element, and the non-metal element;
wherein an atomic percentage of oxygen in the interfacial layer decreases in a direction along a thickness of the interfacial layer, whereas an atomic percentage of the non-metal element in the interfacial layer increases in the direction along the thickness.