US 12,408,353 B2
Device with dielectric metal oxide layers and semiconductor apparatus including the same
Narae Han, Suwon-si (KR); Jeonggyu Song, Seongnam-si (KR); Yongsung Kim, Suwon-si (KR); Jooho Lee, Hwaseong-si (KR); and Eunae Cho, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 16, 2021, as Appl. No. 17/552,680.
Claims priority of application No. 10-2021-0111205 (KR), filed on Aug. 23, 2021.
Prior Publication US 2023/0058762 A1, Feb. 23, 2023
Int. Cl. H10D 1/68 (2025.01); H10B 12/00 (2023.01); H10D 84/40 (2025.01)
CPC H10D 1/692 (2025.01) [H10B 12/315 (2023.02); H10D 84/403 (2025.01); H10B 12/34 (2023.02)] 16 Claims
OG exemplary drawing
 
1. An electronic component comprising:
a first electrode;
a second electrode apart from the first electrode; and
a dielectric structure between the first electrode and the second electrode, the dielectric structure including
a dielectric layer including a metal oxide represented by MxOy, where M is at least one of Ca, Sr, Ba, Sc, Y, La, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, or Lu, and
a leakage current reducing layer including a metal oxide represented by Lax′M′y′Oz′, where M′ is at least one of Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, or Lu,
wherein a thickness of the leakage current reducing layer is within a range of 0.1 Å to 4.5 Å.