US 12,408,349 B2
Ferroelectric tunnel junctions with conductive electrodes having asymmetric nitrogen or oxygen profiles
Yi-Hsuan Chen, Taoyuan (TW); Kuo-Ching Huang, Hsinchu (TW); Kuen-Yi Chen, Taoyuan (TW); and Yi Ching Ong, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 8, 2022, as Appl. No. 17/834,939.
Prior Publication US 2023/0403862 A1, Dec. 14, 2023
Int. Cl. H10B 53/30 (2023.01)
CPC H10B 53/30 (2023.02) 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a ferroelectric tunnel junction (FTJ), wherein the ferroelectric tunnel junction comprises:
a first nitrogen-containing electrode, characterized by a first nitrogen percentage;
a ferroelectric layer disposed over the first nitrogen-containing electrode, the ferroelectric layer comprising a ferroelectric material; and
a second nitrogen-containing electrode disposed over the ferroelectric layer, the second nitrogen-containing electrode characterized by a second nitrogen percentage; and
wherein the first nitrogen percentage is different from the second nitrogen percentage.