US 12,408,328 B2
Semiconductor device and method of fabricating the same
Changfu Ye, Quanzhou (CN); Tsuo-Wen Lu, Quanzhou (CN); Mingqin Shangguan, Quanzhou (CN); and Xiqin Wang, Quanzhou (CN)
Assigned to Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed by Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou (CN)
Filed on Aug. 16, 2022, as Appl. No. 17/888,525.
Claims priority of application No. 202210893653.1 (CN), filed on Jul. 27, 2022; and application No. 202221958948.4 (CN), filed on Jul. 27, 2022.
Prior Publication US 2024/0040773 A1, Feb. 1, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/485 (2023.02) [H10B 12/315 (2023.02); H10B 12/482 (2023.02)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
an insulating layer, disposed on the substrate;
a plurality of bit lines, disposed on the substrate; and
a bit line contact, disposed between a corresponding one of the plurality of bit lines and the substrate, to electrically connect the corresponding one of the plurality of bit lines, wherein the bit line contact comprises a first conductive layer and a first oxidized interface layer, and a bottommost surface of the first oxidized interface layer is lower than a top surface of the insulating layer, wherein the bit line contact further comprises a second oxidized interface layer, and the second oxidized interface layer and the first oxidized interface layer are respectively disposed on a top surface and a bottom surface of the first conductive layer.