US 12,408,314 B2
Semiconductor devices and methods of manufacturing thereof
Shih-Yao Lin, New Taipei (TW); Hsiao Wen Lee, Hsinchu (TW); and Chih-Han Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 8, 2023, as Appl. No. 18/446,094.
Application 18/446,094 is a continuation of application No. 17/460,101, filed on Aug. 27, 2021, granted, now 11,856,744.
Prior Publication US 2023/0389254 A1, Nov. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 10/00 (2023.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10B 10/12 (2023.02) [H10D 30/0243 (2025.01); H10D 30/6219 (2025.01); H10D 62/151 (2025.01); H10D 84/017 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor fin extending along a first direction;
a dielectric fin also extending along the first direction, and disposed next to the first semiconductor fin; and
a gate structure extending along a second direction perpendicular to the first direction, and comprising a first portion and a second portion separated by the dielectric fin;
wherein a top surface of the dielectric fin is vertically aligned with respective top surfaces of the first and second portions of the gate structure; and
wherein the first portion of the gate structure partially overlays the top surface of the first semiconductor fin and extends along a sidewall of the first semiconductor fin that faces toward the first direction.