US 12,407,347 B2
Gate driver, insulation module, low-voltage circuit unit, and high-voltage circuit unit
Keiji Wada, Kyoto (JP); Bungo Tanaka, Kyoto (JP); and Kosei Osada, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Jul. 26, 2023, as Appl. No. 18/226,293.
Application 18/226,293 is a continuation of application No. PCT/JP2022/002654, filed on Jan. 25, 2022.
Claims priority of application No. 2021-015944 (JP), filed on Feb. 3, 2021.
Prior Publication US 2023/0370064 A1, Nov. 16, 2023
Int. Cl. H03K 17/00 (2006.01); H01F 19/04 (2006.01); H03K 17/691 (2006.01)
CPC H03K 17/691 (2013.01) [H01F 19/04 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A gate driver that is configured to apply a drive voltage signal to a gate of a switching element, the gate driver comprising:
a low-voltage circuit configured to be actuated by application of a first voltage;
a high-voltage circuit configured to be actuated by application of a second voltage that is higher than the first voltage;
a transformer;
a capacitor connected in series to the transformer;
a low-voltage circuit chip that includes the low-voltage circuit;
a high-voltage circuit chip that includes the high-voltage circuit;
a transformer chip that includes the transformer;
a capacitor chip that includes the capacitor;
a low-voltage die pad on which the low-voltage circuit chip is mounted; and
a high-voltage die pad on which the high-voltage circuit chip is mounted,
wherein the low-voltage circuit and the high-voltage circuit are connected by the transformer and the capacitor and configured to transmit a signal through the transformer and the capacitor,
the transformer chip is mounted on the low-voltage die pad or the high-voltage die pad, and
the capacitor chip is mounted on the low-voltage die pad or the high-voltage die pad.