US 12,407,343 B2
Semiconductor devices and circuits with increased breakdown voltage
Yi-An Lai, Taipei (TW); Chan-Hong Chern, Palo Alto, CA (US); and Cheng-Hsiang Hsieh, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Apr. 8, 2024, as Appl. No. 18/629,141.
Application 18/629,141 is a continuation of application No. 17/835,688, filed on Jun. 8, 2022, granted, now 11,955,956.
Prior Publication US 2024/0259013 A1, Aug. 1, 2024
Int. Cl. H03K 17/04 (2006.01); H02H 9/04 (2006.01); H03K 17/0812 (2006.01)
CPC H03K 17/08128 (2013.01) [H02H 9/04 (2013.01); H03K 17/08122 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A switching circuit comprising:
a main circuit comprising a plurality of first transistors and comprising a first node, a second node, and a third node, wherein the main circuit is operative in response to a control signal received by the first node, and the second node is configured to receive a supply voltage;
an auxiliary circuit electrically coupled to the second node of the main circuit and configured to provide surge protection for the main circuit, wherein the auxiliary circuit comprises:
a second transistor, wherein a breakdown voltage of the second transistor is different than a breakdown voltage of each transistor of the plurality of first transistors,
a plurality of diodes connected in serial, wherein an anode of one of the plurality of diodes is electrically coupled to a gate terminal of the second transistor, and
a resistive element connected in parallel with the plurality of diodes.