US 12,407,342 B2
Drive circuit to drive power semiconductor element, power semiconductor module, and power conversion device
Takeshi Horiguchi, Tokyo (JP); and Takashi Masuhara, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 18/689,436
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Oct. 13, 2021, PCT No. PCT/JP2021/037882
§ 371(c)(1), (2) Date Mar. 6, 2024,
PCT Pub. No. WO2023/062745, PCT Pub. Date Apr. 20, 2023.
Prior Publication US 2025/0007507 A1, Jan. 2, 2025
Int. Cl. H03K 17/08 (2006.01)
CPC H03K 17/08 (2013.01) 14 Claims
OG exemplary drawing
 
1. A drive circuit for a power semiconductor element, the power semiconductor element comprising a first main electrode on a high potential side, a second main electrode on a low potential side, and a control electrode, a state between the first main electrode and the second main electrode being switched between a conducting state and a non-conducting state in accordance with a voltage applied to the control electrode, the drive circuit comprising:
a turn-on circuit to turn on the power semiconductor element by applying a first supply voltage to the control electrode in accordance with an on command from a controller;
a first turn-off circuit to turn off the power semiconductor element by applying a second supply voltage to the control electrode in accordance with an off command from the controller;
a voltage clamp circuit connected between the first main electrode and the control electrode;
a second turn-off circuit comprising a capacitive element and a switching element connected in series between the control electrode and the second main electrode and a resistive element connected in parallel to the capacitive element; and
a turn-off control circuit to control on and off of the switching element in the second turn-off circuit, wherein
the turn-off control circuit switches the switching element to on when a voltage across the first main electrode and the second main electrode increases after start of turn-off of the power semiconductor element by the first turn-off circuit.