US 12,407,299 B2
Frequency mixer and transceiver
Zhilin Chen, Guangdong (CN)
Assigned to SANECHIPS TECHNOLOGY CO., LTD., Guangdong (CN)
Appl. No. 18/564,116
Filed by SANECHIPS TECHNOLOGY CO., LTD., Guangdong (CN)
PCT Filed Mar. 21, 2022, PCT No. PCT/CN2022/081928
§ 371(c)(1), (2) Date Nov. 27, 2023,
PCT Pub. No. WO2022/247410, PCT Pub. Date Dec. 1, 2022.
Claims priority of application No. 202110591105.9 (CN), filed on May 28, 2021.
Prior Publication US 2024/0250641 A1, Jul. 25, 2024
Int. Cl. H03D 7/14 (2006.01)
CPC H03D 7/1458 (2013.01) [H03D 7/1441 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A frequency mixer, comprising:
a transconductance circuit connected to an input signal terminal, and configured to generate a differential signal according to an input signal from the input signal terminal and output the differential signal through a first output terminal and a second output terminal of the transconductance circuit;
a switch circuit connected to a local oscillator signal terminal and the first output terminal and the second output terminal of the transconductance circuit, and configured to perform frequency mixing on a local oscillator signal from the local oscillator signal terminal and the differential signal to generate a mixed signal and output the mixed signal through a first output terminal and a second output terminal of the switch circuit;
a load circuit connected to an output signal terminal and configured to provide a load; and
an amplification circuit connected between the switch circuit and the load circuit and configured to amplify the mixed signal,
wherein the amplification circuit comprises:
a common-gate path comprising a first transistor device and a second transistor device having gate electrodes thereof coupled to each other; wherein the first transistor device has a source electrode connected to the first output terminal of the switch circuit, and a drain electrode connected to the first output terminal of the amplification circuit; and the second transistor device has a source electrode connected to the second output terminal of the switch circuit, and a drain electrode connected to the second output terminal of the amplification circuit; and
a common-source path comprising a third transistor device and a fourth transistor device having source electrodes thereof coupled to each other; wherein the third transistor device has a gate electrode coupled to the first output terminal of the switch circuit, and a drain electrode coupled to the second output terminal of the amplification circuit; and the fourth transistor device has a gate electrode coupled to the second output terminal of the switch circuit, and a drain electrode coupled to the first output terminal of the amplification circuit.