US 12,407,147 B2
Edge-emitting semiconductor laser diode and method of manufacturing the same
Martin Hetzl, Pettendorf (DE); Petrus Sundgren, Lappersdorf (DE); Jens Ebbecke, Rohr in Niederbayern (DE); and Uwe Strauß, Bad Abbach (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/596,642
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jul. 9, 2020, PCT No. PCT/EP2020/069411
§ 371(c)(1), (2) Date Dec. 15, 2021,
PCT Pub. No. WO2021/009006, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 102019118993.4 (DE), filed on Jul. 12, 2019.
Prior Publication US 2022/0102941 A1, Mar. 31, 2022
Int. Cl. H01S 5/10 (2021.01); H01S 5/02 (2006.01); H01S 5/028 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/209 (2013.01) [H01S 5/0206 (2013.01); H01S 5/0282 (2013.01); H01S 5/0287 (2013.01); H01S 5/106 (2013.01); H01S 5/34313 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An edge-emitting semiconductor laser diode comprising:
a growth substrate;
a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer; and
two facets located opposite each other,
wherein the facets bound the semiconductor layer sequence in a lateral direction,
wherein the semiconductor layer sequence comprises two edge regions adjoining the facets and a central region directly adjoining both edge regions,
wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region,
wherein the active layer is spaced apart from one facet,
wherein a distance of the active layer to the facet varies along a direction parallel to this facet and perpendicular to a growth direction of the semiconductor layer sequence, and
wherein the etch stop layer is arranged between the growth substrate and the active layer.