US 12,407,146 B2
Vertical cavity light-emitting element and manufacturing method of the same
Yuhzoh Tsuda, Tokyo (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Filed by Stanley Electric Co., Ltd., Tokyo (JP)
Filed on Jun. 6, 2022, as Appl. No. 17/832,688.
Claims priority of application No. 2021-94869 (JP), filed on Jun. 7, 2021.
Prior Publication US 2022/0393436 A1, Dec. 8, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18377 (2013.01) [H01S 5/04257 (2019.08); H01S 5/18341 (2013.01); H01S 5/18369 (2013.01); H01S 5/2275 (2013.01); H01S 5/3211 (2013.01); H01S 5/34333 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A vertical cavity light-emitting element comprising:
a substrate;
a first multilayer film reflecting mirror formed on the substrate;
a semiconductor structure layer that includes a nitride semiconductor, the nitride semiconductor including a first semiconductor layer that is formed on the first multilayer film reflecting mirror and is a first conductivity type, a second semiconductor layer that is formed on the first semiconductor layer and is the first conductivity type, a light-emitting layer that is formed on the second semiconductor layer and is configured to expose a region including an outer edge of a top surface of the second semiconductor layer, and a third semiconductor layer that is formed on the light-emitting layer and is a second conductivity type opposite to the first conductivity type;
an electrode formed on the top surface of the second semiconductor layer;
an electrode layer electrically in contact with the third semiconductor layer in one region of a top surface of the third semiconductor layer; and
a second multilayer film reflecting mirror constituting a resonator with the first multilayer film reflecting mirror, wherein
the light-emitting layer has a quantum well structure including a well layer and a barrier layer,
the first semiconductor layer has a composition of GaN,
the second semiconductor layer has a composition of AlGaN, a thickness of the second semiconductor layer being thinner than a thickness of the first semiconductor layer, and a resistance of the second semiconductor layer being larger than a resistance of the first semiconductor layer.