US 12,407,145 B2
Vertical cavity surface emitting laser device with at least one bonding layer
Qianhuan Yu, Santa Clara, CA (US); and Ajit Vijay Barve, San Jose, CA (US)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on Sep. 29, 2021, as Appl. No. 17/449,365.
Claims priority of provisional application 63/213,939, filed on Jun. 23, 2021.
Prior Publication US 2022/0416506 A1, Dec. 29, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/18377 (2013.01) [H01S 5/0206 (2013.01); H01S 5/0421 (2013.01); H01S 5/18308 (2013.01); H01S 5/34306 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A vertical cavity surface emitting laser (VCSEL) device, comprising:
a substrate;
a first mirror disposed over the substrate;
a bonding layer disposed over the first mirror;
a first n-type layer disposed directly over the bonding layer;
an active region disposed directly over the first n-type layer, wherein:
the substrate is a gallium arsenide (GaAs) substrate, and
the active region is an indium phosphide (InP)-based active region;
a p-type layer disposed directly over the active region;
a second n-type layer disposed over the active region;
a tunnel junction disposed between the second n-type layer and the active region,
wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
a second mirror disposed over the second n-type layer;
a set of first contacts below the tunnel junction; and
a set of second contacts disposed on the second n-type layer and adjacent to the second mirror.