US 12,406,974 B1
Optoelectronic device including a light-emitting diode stacked on a photodetector
Julia Simon, Grenoble (FR); Clément Ballot, Grenoble (FR); and Quentin Abadie, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Mar. 3, 2025, as Appl. No. 19/068,401.
Claims priority of application No. 2402159 (FR), filed on Mar. 4, 2024.
Int. Cl. H01L 33/00 (2010.01); H01L 25/16 (2023.01); H10F 55/00 (2025.01); H10H 29/01 (2025.01); H10H 29/14 (2025.01); H10H 29/85 (2025.01); H10H 29/49 (2025.01)
CPC H01L 25/167 (2013.01) [H10F 55/18 (2025.01); H10H 29/011 (2025.01); H10H 29/142 (2025.01); H10H 29/857 (2025.01); H10H 29/49 (2025.01)] 15 Claims
OG exemplary drawing
 
1. An optoelectronic device, comprising:
a substrate;
a control circuit integrated in and/or on the substrate comprising an interconnection stack;
a matrix of one pixel or more, each pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode, and each pixel being such that:
the photodetector is sensitive to a detection wavelength λ2 and comprises a detection surface extending in a plane substantially parallel to a main plane of the substrate;
the light-emitting diode comprises:
an active stack with a cutoff wavelength λc shorter than the detection wavelength λ2 comprising first and second doped layers of opposite types,
a buried electrode in contact with the second doped layer,
the light-emitting diode being arranged so that the buried electrode is interposed between the interconnection stack and the active stack, and covers the detection surface, and so that:
the intermediate region is delimited by the detection surface and extends from the detection surface as far as the active stack,
the optoelectronic device wherein it further comprises:
a via passing entirely through the active stack and extending up to an interconnection level of the interconnection stack;
an electrical contact passing entirely through the active stack, in contact with the buried electrode;
an electrical path electrically connecting the buried electrode to the control circuit and comprising the electrical through-contact and the via;
and in that:
the intermediate region is devoid of metal,
the buried electrode is transparent to the detection wavelength λ2.