US 12,406,973 B2
Structure with photodiode, high electron mobility transistor, surface acoustic wave device and fabricating method of the same
Da-Jun Lin, Kaohsiung (TW); Chih-Wei Chang, Tainan (TW); Fu-Yu Tsai, Tainan (TW); Bin-Siang Tsai, Changhua County (TW); and Chung-Yi Chiu, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 7, 2022, as Appl. No. 18/077,192.
Claims priority of application No. 202211404042.2 (CN), filed on Nov. 10, 2022.
Prior Publication US 2024/0162208 A1, May 16, 2024
Int. Cl. H10D 30/01 (2025.01); H01L 25/16 (2023.01); H03H 3/08 (2006.01); H03H 9/02 (2006.01); H10D 30/47 (2025.01); H10D 30/67 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/20 (2025.01)
CPC H01L 25/167 (2013.01) [H03H 3/08 (2013.01); H03H 9/02976 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 30/6737 (2025.01); H10D 30/6738 (2025.01); H10D 30/675 (2025.01); H10D 62/85 (2025.01); H10D 62/8503 (2025.01); H10D 64/01 (2025.01); H10D 64/258 (2025.01); H10D 64/64 (2025.01); H10F 71/1278 (2025.01); H10F 77/1246 (2025.01); H10F 77/146 (2025.01); H10F 77/206 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A structure with a photodiode, a high electron mobility transistor (HEMT) and a surface acoustic wave (SAW) device, comprising: a photodiode, comprising:
a first III-V semiconductor layer;
a first N-type III-V semiconductor layer disposed on and contacting the first III-V semiconductor layer;
a multi-quantum well (MQW) layer disposed on and contacting the first N-type III-V semiconductor layer;
a second III-V semiconductor layer disposed on and contacting the MQW layer;
a P-type III-V semiconductor layer disposed on and contacting the second III-V semiconductor layer;
a first electrode disposed on and contacting the P-type III-V semiconductor layer; and
a second electrode disposed on and contacting the first N-type III-V semiconductor layer;
an HEMT comprising:
a channel layer;
an active layer disposed on the channel layer;
a P-type gate disposed on the active layer;
a gate electrode disposed on and contacting the P-type gate; and
two source/drain electrodes respectively disposed at two sides of the P-type gate, wherein the two source/drain electrodes are embedded within the active layer and the channel layer;
wherein Schottky contact is between the first electrode and the P-type III-V semiconductor layer, and between the gate electrode and the P-type gate, Ohmic contact is between the second electrode and the first N-type III-V semiconductor layer, between one of the two source/drain electrodes and the active layer and between the other one of two source/drain electrodes and the active layer.