US 12,406,969 B2
Micro light-emitting diode device
Li-Yi Chen, Tainan (TW); and Hsin-Wei Lee, Tainan (TW)
Assigned to MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed by MIKRO MESA TECHNOLOGY CO., LTD., Apia (WS)
Filed on Mar. 13, 2023, as Appl. No. 18/182,392.
Prior Publication US 2024/0312961 A1, Sep. 19, 2024
Int. Cl. H01L 25/075 (2006.01); H01L 25/16 (2023.01); H10H 20/825 (2025.01)
CPC H01L 25/0753 (2013.01) [H01L 25/167 (2013.01); H10H 20/8252 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A micro light-emitting diode device, comprising:
a substrate;
a micro light-emitting diode having a lateral width smaller than 100 μm, disposed on the substrate, and comprising:
a p-type GaN layer;
an n-type III-nitride layer above the p-type GaN layer, wherein III refers to at least one element of aluminum, gallium, and indium;
an n-doped AlxGayIn(1-x-y)N layer above and in contact with the n-type III-nitride layer, wherein x is equal to or greater than about 0.02, and a thickness of the n-doped AlxGayIn(1-x-y)N layer is greater than 10 nm; and
an active layer between the p-type GaN layer and the n-type III-nitride layer; and
a transparent top electrode at least partially covering and in contact with the n-doped AlxGayIn(1-x-y)N layer,
wherein a refractive index of the n-doped AlxGayIn(1-x-y)N layer is smaller than a refractive index of the n-type III-nitride layer,
wherein a sum of thicknesses of the p-type GaN layer, the active layer, the n-type III-nitride layer, and the n-doped AlxGayIn(1-x-y)N layer is greater than 400 nm,
wherein a sum of the thicknesses of the n-type III-nitride layer and the n-doped AlxGayIn(1-x-y)N layer is greater than a sum of the thicknesses of the active layer and the p-type GaN layer.