US 12,406,960 B2
Method of manufacturing laminate by sinter- bonding semiconductor chip and substrate
Isao Ichikawa, Tokyo (JP); Hidekazu Nakayama, Tokyo (JP); and Yosuke Sato, Tokyo (JP)
Assigned to LINTEC CORPORATION, Tokyo (JP)
Appl. No. 17/636,211
Filed by LINTEC CORPORATION, Tokyo (JP)
PCT Filed Aug. 20, 2020, PCT No. PCT/JP2020/031399
§ 371(c)(1), (2) Date Feb. 17, 2022,
PCT Pub. No. WO2021/039566, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 2019-153523 (JP), filed on Aug. 26, 2019.
Prior Publication US 2022/0293554 A1, Sep. 15, 2022
Int. Cl. H01L 23/00 (2006.01); B22F 7/08 (2006.01)
CPC H01L 24/83 (2013.01) [B22F 7/08 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/83487 (2013.01); H01L 2224/8384 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of manufacturing a laminate, the method comprising:
providing a film-form firing material on a support sheet, the film-form firing material containing a sinterable metal particle and a binder component and having an identical or substantially identical shape and an identical size to a shape and size of a semiconductor chip to be applied;
applying a back surface side of the semiconductor chip to the film-form firing material on the support sheet to face each other;
peeling off the film-form firing material and the semiconductor chip from the support sheet;
applying, to a substrate, a film-form firing material side of the semiconductor chip to which the film-form firing material has been applied; and
sinter-bonding the semiconductor chip and the substrate by heating the film-form firing material to 200° C. or higher,
wherein the film-form firing material is formed on a release film by punching using a mold having an identical or substantially identical shape and an identical size to a shape and size of the semiconductor chip to be applied; and
the film-form firing material formed on the release film is transferred onto the support sheet to provide the film-form firing material on the support sheet.