US 12,406,954 B2
Memory devices having vertical transistors and methods for forming the same
Hongbin Zhu, Wuhan (CN); Wei Liu, Wuhan (CN); and Yanhong Wang, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Dec. 16, 2021, as Appl. No. 17/553,759.
Application 17/553,759 is a continuation of application No. PCT/CN2021/115594, filed on Aug. 31, 2021.
Prior Publication US 2023/0062141 A1, Mar. 2, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/18 (2023.01)
CPC H01L 24/08 (2013.01) [H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1436 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory cell comprising a vertical transistor, and a storage unit having a first end coupled to a first terminal of the vertical transistor, the vertical transistor comprising a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body;
a metal bit line coupled to a second terminal of the vertical transistor via an ohmic contact and extending in a second direction perpendicular to the first direction;
a dielectric layer opposing the memory cell with the metal bit line positioned between the dielectric layer and the memory cell; and
a conductor extending in the first direction from the dielectric layer to couple to a second end of the storage unit, wherein in the first direction, a length of the conductor is greater than a length of the semiconductor body of the vertical transistor.