US 12,406,953 B2
Semiconductor apparatus and method of making semiconductor apparatus
Shinichiro Sekijima, Nagano (JP)
Assigned to SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed by SHINKO ELECTRIC INDUSTRIES CO., LTD., Nagano (JP)
Filed on Jun. 3, 2022, as Appl. No. 17/805,302.
Claims priority of application No. 2021-097292 (JP), filed on Jun. 10, 2021.
Prior Publication US 2022/0399293 A1, Dec. 15, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/06 (2013.01) [H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 2224/05147 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/014 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor apparatus, comprising:
a first substrate having a first surface and a first conductive pad on the first surface;
a first solder resist layer disposed on the first surface and having a first opening within which a portion of the first conductive pad is positioned;
a second substrate having a second surface opposing the first surface, and having a second conductive pad on the second surface;
a second solder resist layer disposed on the second surface and having a second opening within which a portion of the second conductive pad is positioned;
a semiconductor device disposed between the first substrate and the second substrate and mounted on the first surface of the first substrate;
a conductive core ball made of copper in contact with the first conductive pad and the second conductive pad; and
a solder layer covering at least a side surface of the conductive core ball, a portion of the solder layer being located inside the first opening to cover the portion of the first conductive pad, another portion of the solder layer being located inside the second opening to cover the portion of the second conductive pad,
wherein a maximum dimension of the conductive core ball in a first direction perpendicular to the first surface is smaller than a maximum diameter of the conductive core ball in a plane parallel to the first surface,
wherein the conductive core ball includes:
a first contact surface in direct contact with the first conductive pad; and
a second contact surface in direct contact with the second conductive pad, and
wherein the first contact surface and the second contact surface are each three-dimensionally curved, and a first diameter of the first contact surface and a second diameter of the second contact surface are 5.0% to 15.0% of the maximum diameter of the conductive core ball.