US 12,406,949 B2
Semiconductor device with RF interposer and method therefor
Michael B. Vincent, Chandler, AZ (US)
Assigned to NXP USA, INC., Austin, TX (US)
Filed by NXP USA, INC., Austin, TX (US)
Filed on Aug. 4, 2021, as Appl. No. 17/393,954.
Prior Publication US 2023/0044903 A1, Feb. 9, 2023
Int. Cl. H01L 23/66 (2006.01); H01L 21/50 (2006.01); H01L 23/14 (2006.01); H01Q 1/22 (2006.01)
CPC H01L 23/66 (2013.01) [H01L 21/50 (2013.01); H01L 23/14 (2013.01); H01Q 1/2283 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
providing a radio frequency (RF) interposer, the RF interposer comprising:
a non-conductive substrate with a bottom side;
a conductive pad formed at the bottom side of the non-conductive substrate;
a radiating element formed on the non-conductive substrate and interconnected with the conductive pad; and
a cavity formed in the bottom side of the non-conductive substrate;
affixing a packaged semiconductor die in the cavity of the RF interposer with an adhesive material that fills a space between sidewalls of the packaged semiconductor die and sidewalls of the cavity, wherein the packaged semiconductor die has a bottom side and a conductive connector at the bottom side of the packaged semiconductor die;
after affixing the packaged semiconductor die in the cavity, dispensing a conductive material that extends from the conductive pad over the adhesive material in the space to the bottom side of the packaged semiconductor die to form a conductive path between the conductive connector at the bottom side of the packaged semiconductor die and the conductive pad at the bottom side of the non-conductive substrate; and
reflowing to wet the conductive connector across the conductive material and interconnect the packaged semiconductor die with the radiating element.