CPC H01L 23/564 (2013.01) [H01L 21/76251 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H10D 86/201 (2025.01)] | 20 Claims |
1. An apparatus, comprising:
a device layer adjacent to an interconnect layer, the device layer comprising a plurality of semiconductor devices and the interconnect layer comprising a plurality of metal interconnects;
a bond layer on a support substrate and adjacent one of the interconnect layer or the device layer; and
a structure comprising metal, wherein the structure laterally surrounds the semiconductor devices and the metal interconnects, the structure extends through the bond layer, the interconnect layer, and the device layer, and the structure is in contact with the support substrate.
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