US 12,406,940 B2
Semiconductor chip having a crack stop structure
Sergey Ananiev, Ottobrunn (DE); Andreas Bauer, Regensburg (DE); Michael Goroll, Poing (DE); Maria Heidenblut, Schwarzenfeld (DE); Stefan Kaiser, Aschheim (DE); Gunther Mackh, Neumarkt (DE); Kabula Mutamba, Pentling (DE); Reinhard Pufall, Munich (DE); and Georg Reuther, Munich (DE)
Assigned to INFINEON TECHNOLOGIES AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 24, 2022, as Appl. No. 17/582,285.
Claims priority of application No. 102021104234.8 (DE), filed on Feb. 23, 2021.
Prior Publication US 2022/0270985 A1, Aug. 25, 2022
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 23/562 (2013.01) 13 Claims
OG exemplary drawing
 
1. A semiconductor chip comprising a crack stop structure, the crack stop structure comprising one or more recesses formed in the semiconductor chip, the one or more recesses extending adjacent to and along a periphery of the semiconductor chip, wherein:
the one or more recesses are filled with a metal material;
the metal material has an intrinsic tensile stress at room temperature to induce compressive stress in at least a region of the periphery of the semiconductor chip; and
a distance between the periphery of the semiconductor chip and the crack stop structure is equal to or less than 25 μm.