US 12,406,939 B2
Semiconductor structure and manufacturing method thereof
Chang-Hung Lin, Taichung (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Winbond Electronics Corp., Taichung (TW)
Filed on Sep. 28, 2022, as Appl. No. 17/954,350.
Prior Publication US 2024/0105634 A1, Mar. 28, 2024
Int. Cl. H01L 23/544 (2006.01)
CPC H01L 23/544 (2013.01) [H01L 2223/54426 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate comprising a monitoring region; and
a monitoring mark located in the monitoring region, wherein a top-view pattern of the monitoring mark comprises a curved line and a recess, the curved line and the recess are opposite to each other, the curved line has a vertex, the recess has a right-angled corner, and the monitoring mark is integrally formed.
 
11. A manufacturing method of a semiconductor structure, comprising:
providing a substrate, wherein the substrate comprises a monitoring region; and
forming a monitoring mark in the monitoring region, wherein a top-view pattern of the monitoring mark comprises a curved line and a recess, the curved line and the recess are opposite to each other, the curved line has a vertex, the recess has a first right-angled corner, and the monitoring mark is integrally formed.