US 12,406,933 B2
Semiconductor device including through-insulator via structure
Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Feb. 22, 2023, as Appl. No. 18/112,616.
Prior Publication US 2024/0282711 A1, Aug. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/538 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 21/78 (2013.01); H01L 23/3157 (2013.01); H01L 23/5383 (2013.01); H01L 23/562 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an interposer having a first surface and a second surface opposite to the first surface;
a conductive via extending between the first surface and the second surface of the interposer;
an insulation layer separating the conductive via from the interposer;
a first electronic component disposed on the second surface and electrically connected to the conductive via;
a second electronic component embedded within the interposer; and
an encapsulant encapsulating the second electronic component, wherein the encapsulant fully penetrates the interposer.