| CPC H01L 23/5283 (2013.01) [H01L 21/7682 (2013.01); H10D 64/519 (2025.01); H01L 21/76885 (2013.01); H01L 23/5329 (2013.01)] | 4 Claims |
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1. An RF switch device, comprising:
a semiconductor layer;
gate electrodes spaced apart from each other in a single stage and on the semiconductor layer;
sources in the semiconductor layer;
drains in the semiconductor layer;
a lower source contact connected to one of the sources;
a first lower metal structure connected to the lower source contact;
an upper source contact connected to the first lower metal structure;
a first upper metal structure connected to the upper source contact;
a lower drain contact connected to one of the drains;
a second lower metal structure connected to the lower drain contact;
an upper drain contact connected to the second lower metal structure;
a second upper metal structure connected to the upper drain contact; and
air gaps configured such that, in the single stage and on or over each gate electrode, at least one of the air gaps has a different width than other ones of the air gaps,
wherein the first upper metal structure includes:
a source tab extending along a first direction; and
a plurality of source extensions extending in a second direction from the source tab,
the second upper metal structure includes:
a drain tab extending in the first direction and spaced apart from the source tab in the second direction; and
a plurality of drain extensions extending in the second direction from the drain tab, and
each of the source extensions and the drain extensions has a length less than half a distance between the source tab and the drain tab in the second direction.
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