| CPC H01L 23/5226 (2013.01) [H01L 21/768 (2013.01)] | 19 Claims |
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1. A semiconductor structure, comprising:
a substrate; and
a pad structure located on the substrate and comprising:
material pairs stacked on the substrate to form a stair step structure, wherein each of the material pairs comprises a conductive layer and a dielectric layer located on the conductive layer; and
pads, wherein each of the pads comprises:
a conductive pillar embedded in the material pair and connected to the conductive layer of the material pair; and
a pad layer located on the conductive pillar, wherein
a thickness of the pad is greater than a thickness of the conductive layer.
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