US 12,406,914 B2
Ultra-thin, hyper-density semiconductor packages
Debendra Mallik, Chandler, AZ (US); Robert L. Sankman, Phoenix, AZ (US); Robert Nickerson, Chandler, AZ (US); Mitul Modi, Phoenix, AZ (US); Sanka Ganesan, Chandler, AZ (US); Rajasekaran Swaminathan, Chandler, AZ (US); Omkar Karhade, Chandler, AZ (US); Shawna M. Liff, Scottsdale, AZ (US); Amruthavalli Alur, Tempe, AZ (US); and Sri Chaitra J. Chavali, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 30, 2022, as Appl. No. 18/091,982.
Application 18/091,982 is a continuation of application No. 17/862,300, filed on Jul. 11, 2022.
Application 17/862,300 is a continuation of application No. 16/646,529, granted, now 11,430,724, issued on Aug. 30, 2022, previously published as PCT/US2017/069138, filed on Dec. 30, 2017.
Prior Publication US 2023/0138543 A1, May 4, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01)
CPC H01L 23/49811 (2013.01) [H01L 23/3128 (2013.01); H01L 23/5389 (2013.01); H01L 24/29 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a substrate having a first surface opposite a second surface, the substrate having a first lateral width;
a component having a first surface opposite a second surface, and a first side and a second side between the first surface and the second surface, the second side opposite the first side, the second surface of the component coupled to the first surface of the substrate by a plurality of interconnects;
an epoxy layer between the second surface of the component and the first surface of the substrate, the epoxy layer in lateral contact with individual ones of the plurality of interconnects;
a first pillar comprising copper, the first pillar on the first surface of the substrate, the first pillar having a first side and a second side, the second side opposite the first side, the second side of the first pillar laterally spaced apart from the first side of the component, and the first pillar extending above the first surface of the component;
a second pillar comprising copper, the second pillar on the first surface of the substrate, the second pillar having a first side and a second side, the second side opposite the first side, the first side of the second pillar laterally spaced apart from the second side of the component, and the second pillar extending above the first surface of the component;
a mold compound on the first surface of the substrate, the mold compound in lateral contact with the first side of the first pillar, the second side of the first pillar, the first side of the component, the second side of the component, the first side of the second pillar, and the second side of the second pillar, the mold compound having a second lateral width the same as the first lateral width, and the mold compound having an uppermost surface above the first surface of the component;
a pitch translation interposer on the mold compound and having a bottommost surface above and in contact with the uppermost surface of the mold compound, the pitch translation interposer in contact with the first pillar and the second pillar, the bottommost surface of the pitch translation interposer vertically spaced apart from the first surface of the component, and the pitch translation interposer having a third lateral width the same as the second lateral width; and
a plurality of solder balls on the second surface of the substrate.