US 12,406,907 B2
Semiconductor structure with conductive_structure
Jia-Heng Wang, Kaohsiung (TW); Pang-Chi Wu, Hsinchu (TW); Chao-Hsun Wang, Taoyuan (TW); Fu-Kai Yang, Hsinchu (TW); and Mei-Yun Wang, Hsin-Chu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 15, 2022, as Appl. No. 17/721,557.
Prior Publication US 2023/0335469 A1, Oct. 19, 2023
Int. Cl. H01L 23/482 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01)
CPC H01L 23/4821 (2013.01) [H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
forming a gate structure over a substrate;
forming a first dielectric layer over the gate structure;
forming a source/drain (S/D) structure adjacent to the gate structure;
forming an S/D contact structure over the S/D structure;
forming a second dielectric layer over the S/D contact structure;
forming a first trench through the first dielectric layer and the second dielectric layer over the gate structure to expose a top surface of the gate structure;
forming a gate contact structure in the first trench, wherein the gate contact structure is in direct contact with the gate structure;
removing a top portion of the gate contact structure; and
forming a bridging contact structure over the gate contact structure and the S/D contact structure, wherein the bridging contact structure is in direct contact with the gate contact structure and the S/D contact structure.