US 12,406,899 B2
Semiconductor package system
Heungkyu Kwon, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 26, 2021, as Appl. No. 17/384,863.
Application 17/384,863 is a continuation of application No. 16/397,278, filed on Apr. 29, 2019, granted, now 11,075,138, issued on Jul. 27, 2021.
Claims priority of application No. 10-2018-0054304 (KR), filed on May 11, 2018; application No. 10-2018-0054305 (KR), filed on May 11, 2018; application No. 10-2018-0054307 (KR), filed on May 11, 2018; application No. 10-2018-0055081 (KR), filed on May 14, 2018; and application No. 10-2018-0110511 (KR), filed on Sep. 14, 2018.
Prior Publication US 2021/0358831 A1, Nov. 18, 2021
Int. Cl. H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01)
CPC H01L 23/3735 (2013.01) [H01L 23/3107 (2013.01); H01L 23/367 (2013.01); H01L 24/09 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package system comprising:
a substrate;
a first semiconductor package on the substrate;
a second semiconductor package laterally spaced apart from the first semiconductor package on the substrate;
a first passive element on the substrate, the first passive element being spaced apart from the first semiconductor package;
dam structures disposed between the second semiconductor package and the first passive element, and provided on the substrate;
a heat dissipation structure on the first semiconductor package, the second semiconductor package, and the first passive element; and
a first heat conduction layer between the first semiconductor package and the heat dissipation structure,
a second heat conduction layer between the second semiconductor package and the heat dissipation structure,
wherein a sum of a first height of the first semiconductor package and a first thickness of the first heat conduction layer is greater than a height of the first passive element,
wherein the first height of the first semiconductor package is greater than a second height of the second semiconductor package,
wherein the first heat conduction layer and the second heat conduction layer include a thermal interface material comprising polymers and thermally conductive particles, and
wherein the sum of the height of the first semiconductor package and the first heat conduction layer is the same as the sum of the height of the second semiconductor package and the second heat conduction layer.