US 12,406,887 B2
Selective film formation using a self-assembled monolayer
Dina H. Triyoso, Albany, NY (US); Lior Huli, Albany, NY (US); Corey Lemley, Troy, NY (US); Robert D. Clark, Livermore, CA (US); and Gerrit Leusink, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Jun. 30, 2022, as Appl. No. 17/854,930.
Claims priority of provisional application 63/218,841, filed on Jul. 6, 2021.
Prior Publication US 2023/0009688 A1, Jan. 12, 2023
Int. Cl. H01L 21/768 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/687 (2006.01)
CPC H01L 21/76897 (2013.01) [H01L 21/02071 (2013.01); H01L 21/02282 (2013.01); H01L 21/3212 (2013.01); H01L 21/32134 (2013.01); H01L 21/68764 (2013.01); H01L 21/76834 (2013.01); H01L 2221/1063 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
loading the substrate in a processing system, the substrate comprising a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level;
etching the metal to form a recessed metal surface below the dielectric material surface;
selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process;
depositing a dielectric film comprising a second dielectric material on the dielectric material surface, wherein the depositing further deposits an additional dielectric film on the recessed metal surface; and
removing the additional dielectric film from the recessed metal surface to selectively form the dielectric film on the dielectric material surface and not on the recessed metal surface.