US 12,406,886 B2
Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devices
Chandra S. Tiwari, Boise, ID (US); David A. Kewley, Boise, ID (US); Deep Panjwani, Boise, ID (US); Matthew Holland, Victor, NY (US); Matthew J. King, Boise, ID (US); Michael E. Koltonski, Boise, ID (US); Tom J. John, Boise, ID (US); Xiaosong Zhang, Boise, ID (US); and Yi Hu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 14, 2022, as Appl. No. 17/720,695.
Prior Publication US 2023/0335439 A1, Oct. 19, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 41/10 (2023.01); H10B 41/30 (2023.01); H10B 41/35 (2023.01); H10B 41/48 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 80/00 (2023.01); H10B 41/27 (2023.01)
CPC H01L 21/76897 (2013.01) [H01L 21/76832 (2013.01); H01L 23/53295 (2013.01); H10B 41/27 (2023.02); H10B 41/30 (2023.02); H10B 41/48 (2023.02)] 25 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising an alternating sequence of conductive structures and insulative structures arranged in tiers;
memory cells vertically extending through the stack structure, the memory cells comprising a channel material vertically extending through the stack structure;
an additional stack structure vertically overlying the stack structure and comprising additional conductive structures and additional insulative structures arranged in additional tiers;
first pillar structures extending through the additional stack structure and vertically overlying a portion of the memory cells;
second pillar structures adjacent to the first pillar structures and extending through the additional stack structure and vertically overlying another portion of the memory cells; and
slot structures extending through at least a portion of the additional stack structure, the slot structures laterally adjacent to the first pillar structures and to the second pillar structures, wherein a distance between the first pillar structures and the slot structures is substantially equal to a distance between the second pillar structures and the slot structures, the slot structures exhibiting a non-linear shape.