US 12,406,884 B2
Self field-suppression CVD tungsten (W) fill on PVD W liner
Zhimin Qi, Fremont, CA (US); Yi Xu, San Jose, CA (US); Shirish A. Pethe, Cupertino, CA (US); Xingyao Gao, San Jose, CA (US); Shiyu Yue, San Jose, CA (US); Aixi Zhang, Sunnyvale, CA (US); Wei Lei, Campbell, CA (US); Yu Lei, Belmont, CA (US); Geraldine Vasquez, San Jose, CA (US); Dien-yeh Wu, San Jose, CA (US); and Da He, Sunnyvale, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 11, 2022, as Appl. No. 17/718,242.
Prior Publication US 2023/0326791 A1, Oct. 12, 2023
Int. Cl. H01L 21/768 (2006.01); C23C 14/18 (2006.01); C23C 16/14 (2006.01); H01L 21/285 (2006.01)
CPC H01L 21/76879 (2013.01) [C23C 14/18 (2013.01); C23C 16/14 (2013.01); H01L 21/2855 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method of depositing tungsten in features of a substrate, comprising:
depositing a seed layer comprising 95 percent or greater of tungsten in the features via a physical vapor deposition (PVD) process, wherein the PVD process is performed at a chamber pressure of about 0.1 to about 10 mTorr; and
depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features, wherein substantially all of the deposition of the bulk layer is in the features as compared to a field region of the substrate, wherein the CVD process is performed at a chamber pressure of about 1 to about 300 Torr, and wherein the CVD process is performed by:
flowing a first gas comprising hydrogen gas (H2) only at a first flow rate of about 25 to about 75 sccm;
flowing a tungsten precursor at a second flow rate of about 100 to about 1000 sccm, wherein the first flow rate is less than the second flow rate; and
flowing argon gas at a third flow rate of about 3000 to about 7000 sccm, wherein the third flow rate is about 4 to about 20 times greater than the second flow rate.