US 12,406,883 B2
Contact hole
Thomas Bertrams, Dresden (DE); Maik Stegemann, Pesterwitz (DE); Armin Tilke, Dresden (DE); and Sascha Weber, Bannewitz (DE)
Assigned to Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed by Infineon Technologies Dresden GmbH & Co. KG, Dresden (DE)
Filed on Dec. 19, 2018, as Appl. No. 16/225,423.
Claims priority of application No. 102017130683.8 (DE), filed on Dec. 20, 2017.
Prior Publication US 2019/0189509 A1, Jun. 20, 2019
Int. Cl. H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H10D 30/01 (2025.01); H10D 64/23 (2025.01)
CPC H01L 21/76877 (2013.01) [H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 21/76853 (2013.01); H01L 23/53266 (2013.01); H10D 30/0295 (2025.01); H10D 64/256 (2025.01)] 31 Claims
OG exemplary drawing
 
1. A power semiconductor component, comprising:
a power semiconductor partial structure comprising a semiconductor body and an insulating layer arranged on an upper side of the semiconductor body;
a contact hole arranged on an upper side of the insulating layer, the contact hole, proceeding from the upper side of the insulating layer, extending at least partly within the insulating layer and configured for electrical contacting of a contact region below the upper side of the insulating layer;
an adhesion promoter layer arranged on an upper side of the power semiconductor partial structure and at least partly covering the upper side of the insulating layer and a surface of the contact hole;
a tungsten-comprising layer arranged on the adhesion promoter layer and at least partly covering the adhesion promoter layer, the tungsten-comprising layer having a first part in the contact hole and a second part outside the contact hole, the second part being partly removed such that the first part has a first thickness in a region of the contact hole and the second part has a second thickness in a region of the upper side of the insulating layer, the first thickness being dimensioned such that the tungsten-comprising layer fills the contact hole, the second thickness being less than the first thickness; and
a connection layer arranged on the tungsten-comprising layer,
wherein the first thickness is a horizontal measurement of the first part of the tungsten-comprising layer between a vertical centerline of the contact hole and the adhesion promoter layer,
wherein the second thickness is a vertical measurement of the second part of the tungsten-comprising layer between an upper side of the adhesion promoter layer and a lower side of the connection layer.