US 12,406,882 B2
Semiconductor element and method for manufacturing the same
Dai-Ying Lee, Hsinchu County (TW); and Yu-Chao Huang, Hsinchu (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Aug. 23, 2022, as Appl. No. 17/821,479.
Prior Publication US 2024/0071821 A1, Feb. 29, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76843 (2013.01) [H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor element, comprising:
a plug comprising a tungsten plug and a conductive layer on the tungsten plug, wherein the tungsten plug and the conductive layer comprise different materials, the tungsten plug has a first width in a lateral direction, the conductive layer has a second width in the lateral direction, the second width is greater than or equal to the first width;
a via on the plug and electrically connected to the plug, wherein the conductive layer is between the via and the tungsten plug, the via comprises a conductive via and a barrier film on a sidewall of the conductive via, part of the barrier film is between the conductive via and the conductive layer; and
a dielectric layer, wherein the tungsten plug and the conductive layer are in the dielectric layer.