US 12,406,880 B2
Dielectric silicon nitride barrier deposition process for improved metal leakage and adhesion
Qi-Zhong Hong, Richardson, TX (US); Joseph Jian Song, Plano, TX (US); Gregory Boyd Shinn, Dallas, TX (US); and Bhaskar Srinivasan, Allen, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on May 24, 2022, as Appl. No. 17/751,976.
Prior Publication US 2023/0386907 A1, Nov. 30, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/76829 (2013.01) [H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating an electronic device, the method comprising:
forming a diffusion barrier layer on a side of a first dielectric layer and on a side of a metal line, the diffusion barrier layer including silicon nitride material, the diffusion barrier layer formed by a plasma enhanced chemical vapor deposition (PECVD) process that deposits the diffusion barrier layer on the side of the first dielectric layer and the side of the metal line, the PECVD process having an ammonia to silane flow ratio of 3.5 or more and 5 or less, and the PECVD process having a dinitrogen to silane flow ratio of 50 or more and 70 or less; and
forming a second dielectric layer on the diffusion barrier layer.