US 12,406,872 B2
Semiconductor processing chamber with dual-lift mechanism for edge ring elevation management
John Stephen Drewery, San Jose, CA (US); and James E. Tappan, Fremont, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Appl. No. 17/904,774
Filed by Lam Research Corporation, Fremont, CA (US)
PCT Filed Feb. 22, 2021, PCT No. PCT/US2021/019099
§ 371(c)(1), (2) Date Aug. 22, 2022,
PCT Pub. No. WO2021/173498, PCT Pub. Date Sep. 2, 2021.
Claims priority of provisional application 62/705,216, filed on Jun. 16, 2020.
Claims priority of provisional application 62/980,901, filed on Feb. 24, 2020.
Prior Publication US 2022/0415702 A1, Dec. 29, 2022
Int. Cl. H01L 21/687 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/68742 (2013.01) [H01J 37/32623 (2013.01); H01J 37/32642 (2013.01); H01L 21/68735 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a semiconductor processing chamber;
a wafer support surface located within the semiconductor processing chamber and having an outer perimeter; and
one or more dual-lift mechanisms, each dual-lift mechanism including:
a first lifter structure having a first contact surface,
a second lifter structure having a second contact surface,
a common flange structure, and
one or more actuators, wherein:
the one or more actuators of each dual-lift mechanism are each mounted to the common flange structure of that dual-lift mechanism; and
each dual-lift mechanism is positioned such that the first lifter structure and the second lifter structure thereof are positioned outside of the outer perimeter; and
a controller configured to control the one or more actuators of each dual-lift mechanism to:
cause the first lifter structure of that dual-lift mechanism to translate along a first axis perpendicular to the wafer support surface such that the first contact surface of that first lifter structure is moved between a first elevation and a second elevation,
cause the second lifter structure of that dual-lift mechanism to translate along the first axis such that the second contact surface of that second lifter structure is moved between a third elevation and a fourth elevation, and
cause the second lifter structure of that dual-lift mechanism to be translated at least partially along the first axis without simultaneous translation of the first lifter structure of that dual-lift mechanism along the first axis.