US 12,406,850 B2
Semiconductor structure having metal contact features
Chung-Liang Cheng, Changhua County (TW); and Ziwei Fang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Oct. 7, 2022, as Appl. No. 17/962,276.
Application 17/962,276 is a division of application No. 16/353,531, filed on Mar. 14, 2019, granted, now 11,469,109.
Prior Publication US 2023/0037334 A1, Feb. 9, 2023
Int. Cl. H01L 21/28 (2025.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/00 (2025.01); H10D 62/13 (2025.01); H10D 64/62 (2025.01)
CPC H01L 21/28518 (2013.01) [H01L 21/02063 (2013.01); H01L 21/02244 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/797 (2025.01); H10D 62/021 (2025.01); H10D 62/151 (2025.01); H10D 64/62 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an epitaxial structure over a semiconductor substrate;
a conductive feature over the semiconductor substrate, wherein the conductive feature comprises a high-k dielectric layer and a metal layer on the high-k dielectric layer, wherein a top surface of the metal layer is below a top surface of the high-k dielectric layer;
a metal-semiconductor compound layer formed on the epitaxial structure;
a first metal contact structure formed over the top surface of the metal layer of the conductive feature;
a second metal contact structure formed over the metal-semiconductor compound layer;
a spacer between the epitaxial structure and the conductive feature, wherein the spacer is in direct contact with a lower portion of the second metal contact structure; and
a dielectric layer on the spacer, wherein an interface between the dielectric layer and an upper portion of the second metal contact structure is substantially aligned with an interface between the spacer and a lower portion of the second metal contact structure.