US 12,406,845 B2
α-Ga2O3 semiconductor film
Hiroshi Fukui, Obu (JP); Morimichi Watanabe, Nagoya (JP); and Jun Yoshikawa, Nagoya (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Mar. 2, 2022, as Appl. No. 17/653,146.
Application 17/653,146 is a continuation of application No. PCT/JP2019/038518, filed on Sep. 30, 2019.
Prior Publication US 2022/0238645 A1, Jul. 28, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 8/60 (2025.01); H10D 99/00 (2025.01)
CPC H01L 21/02565 (2013.01) [C23C 16/40 (2013.01); C23C 16/4481 (2013.01); H01L 21/02414 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02628 (2013.01); H10D 62/405 (2025.01); H10D 62/80 (2025.01); H10D 8/60 (2025.01); H10D 99/00 (2025.01)] 3 Claims
OG exemplary drawing
 
1. An α-Ga2O3 semiconductor film having a dark spot, which is defined as a measurement point with a maximum emission intensity A of not more than 0.6 times an average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in a wavelength range of 250 to 365 nm.