US 12,406,834 B2
Substrate processing apparatus and substrate processing method
Chin Wook Chung, Seoul (KR); and Moo Young Lee, Seoul (KR)
Assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
Appl. No. 17/617,982
Filed by IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul (KR)
PCT Filed Apr. 1, 2020, PCT No. PCT/KR2020/004441
§ 371(c)(1), (2) Date Dec. 10, 2021,
PCT Pub. No. WO2020/251148, PCT Pub. Date Dec. 17, 2020.
Claims priority of application No. 10-2019-0068789 (KR), filed on Jun. 11, 2019.
Prior Publication US 2022/0246407 A1, Aug. 4, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/50 (2006.01)
CPC H01J 37/32697 (2013.01) [C23C 16/50 (2013.01); H01J 37/32146 (2013.01); H01J 37/3244 (2013.01); H01J 2237/3341 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a chamber;
a plasma excitation unit located on an upper part of the chamber;
a susceptor located inside the chamber to support a substrate;
a first plasma control plate located above the susceptor and forming an excitation space between the upper part of the chamber and thereof;
a second plasma control plate located below the first plasma control plate and forming a control space between the first plasma control plate and thereof;
a plasma control power supply applying voltage to the first plasma control plate and the second plasma control plate;
an upper gas supply source supplying an excitation gas to the excitation space;
a lower gas supply source supplying a process gas to a process space between the second plasma control plate and the susceptor; and
a control unit configured to:
control the lower gas supply source so that the process gas is supplied to the process space to form a reaction layer on the substrate,
control the upper gas supply source so that the excitation gas is supplied to the excitation space, and
control the plasma control power so that a negative voltage is applied to the first plasma control plate and a positive voltage is applied to the second plasma control plate to etch the reaction layer.