US 12,406,830 B2
Apparatus for treating substrate and method for treating substrate
Sun Ryum Lee, Chungcheongnam-do (KR); Loung Sue Chang, Chungcheongnam-do (KR); Jung Yoon Yang, Chungcheongnam-do (KR); In Seong Lim, Gyeonggi-do (KR); and Seung Hoon Jeon, Gyeonggi-do (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-Do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Dec. 10, 2021, as Appl. No. 17/547,303.
Claims priority of application No. 10-2020-0180320 (KR), filed on Dec. 21, 2020.
Prior Publication US 2022/0199364 A1, Jun. 23, 2022
Int. Cl. H01J 37/32 (2006.01)
CPC H01J 37/3222 (2013.01) [H01J 37/3244 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An apparatus for treating a substrate comprising: a process chamber configured to have a processing space therein; a support configured to support the substrate in the process chamber; a gas supply configured to supply processing gas to the processing space; and a microwave application unit configured to generate plasma from the processing gas supplied to the processing space, wherein the microwave application unit includes: a transmissive plate configured to transmit a microwave to the processing space; an antenna plate disposed on the support unit transmissive plate and having a plurality of slots; a power supply configured to apply the microwave to the antenna plate; a dielectric plate disposed above the antenna plate to face the antenna plate; and an upper plate disposed above the dielectric plate, wherein an adjustment groove is formed on a lower surface of the upper plate and configured to adjust an electric field, wherein the adjustment groove is configured to affect the size and width of the electric field by adjusting a depth and width of the adjustment groove.