US 12,406,743 B2
Non-volatile memory with smart control of overdrive voltage
Yi Song, San Jose, CA (US); Jiahui Yuan, Fremont, CA (US); Xiaochen Zhu, Milpitas, CA (US); and Lito De La Rama, San Jose, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Jul. 24, 2023, as Appl. No. 18/357,274.
Claims priority of provisional application 63/479,504, filed on Jan. 11, 2023.
Prior Publication US 2024/0233847 A1, Jul. 11, 2024
Int. Cl. G11C 29/02 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/021 (2013.01) [G11C 29/022 (2013.01); G11C 29/52 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a plurality of non-volatile memory cells;
a plurality of word lines connected to the non-volatile memory cells; and
a control circuit connected to the non-volatile memory cells and the word lines, the control circuit is configured to:
perform a memory operation including applying an overdrive voltage to a first word line of the plurality of word lines, the first word line is not selected for the memory operation;
detect that the memory operation failed;
in response to detecting that the memory operation failed, determine whether adjusting the overdrive voltage applied to the first word line avoids the memory operation failure; and
perform one or more additional memory operations using the adjusted overdrive voltage applied to the first word line if the adjusting the overdrive voltage applied to the word line avoids the memory operation failure.