| CPC G11C 16/26 (2013.01) [G11C 16/0433 (2013.01); G11C 16/24 (2013.01)] | 20 Claims |

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1. A semiconductor device comprising:
a bit line;
memory strings connected to the bit line and having different sizes;
a page buffer including at least a sensing node and a sensing transistor configured to couple the bit line and the sensing node in response to a sensing signal,
wherein, during an evaluation period of the page buffer, resistance of a current path formed from the bit line to the sensing node is adjusted based on a size of a memory string selected among the memory strings.
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