US 12,406,728 B2
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
Shuangqiang Luo, Boise, ID (US); John D. Hopkins, Meridian, ID (US); Jiewei Chen, Meridian, ID (US); and Jordan D. Greenlee, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Mar. 10, 2022, as Appl. No. 17/654,311.
Prior Publication US 2023/0290409 A1, Sep. 14, 2023
Int. Cl. G11C 16/04 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC G11C 16/0483 (2013.01) [H01L 21/76843 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 28 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure comprising blocks each including a vertically alternating sequence of conductive material and insulative material arranged in tiers, at least one of the blocks comprising:
a memory array region having vertically extending strings of memory cells within a horizontal area thereof; and
a staircase region horizontally neighboring the memory array region and comprising:
a staircase structure having steps comprising horizontal ends of the tiers; and
a crest sub-region horizontally interposed between the staircase structure and the memory array region, an uppermost boundary of the tiers within the crest sub-region vertically underlying an uppermost boundary of the tiers within the memory array region;
filled slot structures interposed between the blocks of the stack structure; and
dielectric material substantially continuously horizontally extending over and between the blocks of the stack structure, a vertical thickness of a portion of the dielectric material overlying the crest sub-region of the staircase region of the at least one of the blocks greater than a vertical thickness of an additional portion of the dielectric material overlying the memory array region of the at least one of the blocks.