US 12,406,715 B2
Memory device including row-hammer tracking circuit and operating method thereof
No Geun Joo, Gyeonggi-do (KR); and Jun Seok Noh, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Sep. 1, 2023, as Appl. No. 18/459,418.
Claims priority of application No. 10-2023-0050701 (KR), filed on Apr. 18, 2023.
Prior Publication US 2024/0355375 A1, Oct. 24, 2024
Int. Cl. G11C 11/40 (2006.01); G11C 11/406 (2006.01)
CPC G11C 11/406 (2013.01) 24 Claims
OG exemplary drawing
 
1. A memory device comprising:
a row-hammer tracking circuit configured to:
generate short interval signals each having one of first to n-th lengths based on input intervals between active commands, and
generate a rate control signal based on whether a pattern of the short interval signals corresponds to a row-hammer attack pattern; and
a target command issue circuit configured to adjust a frequency of a target refresh operation according to the rate control signal.