US 12,406,714 B2
Semiconductor memory device performing target refresh and memory system including the same
Woongrae Kim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on May 19, 2022, as Appl. No. 17/748,471.
Claims priority of application No. 10-2022-0000227 (KR), filed on Jan. 3, 2022.
Prior Publication US 2023/0215483 A1, Jul. 6, 2023
Int. Cl. G11C 11/406 (2006.01)
CPC G11C 11/406 (2013.01) 24 Claims
OG exemplary drawing
 
1. A memory system, comprising:
a memory device for storing data;
a memory controller outside the memory device and suitable for generating a first target address, wherein the memory controller samples an address according to an active command, and provides the active command, a precharge command, a normal refresh command, the address and the first target address, to the memory device; and
the memory device suitable for generating a first target refresh command, wherein the first target refresh command is generated according to the precharge command provided from the memory controller outside the memory device and the address provided from the memory controller outside the memory device, and one or more word lines corresponding to the first target address is refreshed according to the first target refresh command.