US 12,406,620 B2
Display device
Keun Woo Kim, Seongnam-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on Oct. 27, 2022, as Appl. No. 17/974,589.
Claims priority of application No. 10-2021-0186024 (KR), filed on Dec. 23, 2021.
Prior Publication US 2023/0206841 A1, Jun. 29, 2023
Int. Cl. G09G 3/3233 (2016.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 59/12 (2023.01)
CPC G09G 3/3233 (2013.01) [H10K 59/131 (2023.02); H10K 71/00 (2023.02); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2310/08 (2013.01); G09G 2320/0247 (2013.01); H10K 59/1201 (2023.02)] 32 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate; and
a plurality of transistors disposed on the substrate, each of the plurality of transistors including:
a semiconductor layer disposed on the substrate,
a gate electrode disposed on the semiconductor layer; and
a light emitting element disposed on the plurality of transistors,
wherein the plurality of transistors include a driving transistor that transmits a driving voltage to the light emitting element and a compensation transistor that is turned on in response to a scan signal,
wherein the semiconductor layer includes a first portion having a first thickness and a second portion having a second thickness thinner than the first thickness, the first portion and the second portion being formed of the same material,
wherein a channel, a source and a drain of the driving transistor are disposed in the first portion of the semiconductor layer,
wherein a channel of at least one of the plurality of transistors other than the driving transistor is disposed in the second portion of the semiconductor layer, and
wherein the semiconductor layer is doped with a dopant of a same conductivity type.