US 12,406,177 B2
Afferent neuron circuit and mechanoreceptive system
Qi Liu, Beijing (CN); Xumeng Zhang, Beijing (CN); Ming Liu, Beijing (CN); Hangbing Lv, Beijing (CN); and Zuheng Wu, Beijing (CN)
Assigned to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Appl. No. 17/597,798
Filed by INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES, Beijing (CN)
PCT Filed Nov. 29, 2019, PCT No. PCT/CN2019/121843
§ 371(c)(1), (2) Date Jan. 24, 2022,
PCT Pub. No. WO2021/097899, PCT Pub. Date May 27, 2021.
Claims priority of application No. 201911127991.9 (CN), filed on Nov. 18, 2019.
Prior Publication US 2022/0253684 A1, Aug. 11, 2022
Int. Cl. G06N 3/063 (2023.01); H10N 39/00 (2023.01)
CPC G06N 3/063 (2013.01) [H10N 39/00 (2023.02)] 8 Claims
OG exemplary drawing
 
1. An afferent neuron circuit, comprising a resistance (Rc) and a volatile threshold switching device (TS);
wherein the volatile threshold switching device (TS) has a parasitic capacitor (Cparasitic);
a first end of the resistance (Rc) serves as a signal input terminal, and a second end of the resistance (Rc) serves as a signal output terminal;
a first end of the volatile threshold switching device (TS) is connected to the signal output terminal, and a second end of the volatile threshold switching device (TS) is grounded,
wherein the afferent neuron circuit has an integrated semiconductor structure,
wherein the volatile threshold switching device (TS) comprises:
a first substrate;
a first isolation layer formed on the first substrate;
a first lower electrode formed on the first isolation layer;
a second isolation layer formed on the first lower electrode;
a first functional layer formed on the second isolation layer wherein a middle part of the first functional layer is connected to the first lower electrode through an etched via hole; and
a first intermediate electrode formed on the first functional layer;
wherein a first resistive film is deposited on the first intermediate electrode to serve as the resistance (Rc), and a first upper electrode is deposited on the first resistive film.