US 12,405,907 B2
Multiple channel memory system
Tony Brewer, Plano, TX (US); David Patrick, McKinney, TX (US); and Bryan Hornung, Plano, TX (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 20, 2020, as Appl. No. 17/075,182.
Prior Publication US 2025/0225087 A1, Jul. 10, 2025
Int. Cl. G06F 13/16 (2006.01)
CPC G06F 13/1694 (2013.01) [G06F 13/1678 (2013.01); G06F 13/1684 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A system comprising:
first and second memory devices having common address and command signals, wherein each memory device has a respective first data width, and wherein the first and second devices are configured to collectively provide a memory interface having a second data width, the second data width having twice as many bits as the first data width; and
a memory controller chiplet includes one or more processors, and is configured to perform memory access operations including a memory read operation comprising issuing read commands to read data from the first and second memory devices using an I/O interface having four memory channels,
wherein the memory controller is configured to issue independent command/address (C/A) commands over each memory channel to access independently addressable regions of each memory device, wherein the C/A commands of a first memory read operation in a first memory channel comprise,
at a first time, providing a first row-activate command to the first memory channel, followed by a first read command, and
at a second time, prior to expiration of an activate-to-activate delay interval initiated with the first row-activate command, providing a second read command to the first memory channel;
wherein the memory controller is further configured to receive data responsive to read requests, including:
at a third time, before the second time, receiving a first burst of data responsive to the first row-activate command and the first read command; and
at a fourth time, after the second time receiving a first burst of data responsive to the first row-activate command and the second read command.